Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in\nvarious experimental conditions. The thickness of the samples was influenced by the Nd-YAG\nlaser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and\nchemical analysis results showed that the films deposited by ns-PLD revealed droplets on the surface\ntogether with a decreased Te concentration and Sb over-stoichiometry. Thin films with improved\nsurface roughness and chemical compositions close to nominal values were deposited by ps- and\nfs-PLD. The X-ray diffraction and Raman spectroscopy results showed that the samples obtained\nwith ns pulses were partially crystallized while the lower fluences used in ps- and fs-PLD led to\namorphous depositions. The optical parameters of the ns-PLD samples were correlated to their\nstructural properties.
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